Power Integrity and Reliability Analysis
Sanketh Semiconductors delivers comprehensive Power Distribution Network (PDN) and Electro-Migration/IR Drop (EMIR) analysis to ensure robust power delivery in your advanced-node designs. Our team has successfully analyzed 80+ SoCs across 7nm to 28nm nodes, preventing power-related failures and improving yield by up to 15% for our clients.
We employ a multi-physics approach combining static and dynamic analysis to identify current density hotspots, voltage drop violations, and electromigration risks. Our methodology supports full-chip and block-level analysis for both digital and analog/mixed-signal designs, providing actionable recommendations to optimize power network robustness.
Our PDN/EMIR Methodology
Complete power integrity verification flow:
- Static IR drop analysis (average current)
- Dynamic IR drop analysis (peak current)
- Electromigration (EM) analysis
- Power grid resistance extraction
- Decoupling capacitance optimization
- Package-aware power integrity analysis
Advanced Analysis Capabilities
Our specialized services include:
- Multi-voltage domain analysis
- Transient power noise analysis
- 3D IC power integrity analysis
- Thermal-aware EM analysis
- Automotive-grade reliability analysis
Analysis Infrastructure
We utilize industry-leading tools and methodologies:
- Ansys RedHawk, Cadence Voltus
- Custom analysis scripts and flows
- Machine learning-based hotspot prediction
- Signoff-quality analysis reports
- Correlation with silicon measurements
Why Our PDN/EMIR Services?
- Identified 200+ power integrity risks
- 15% average yield improvement
- 30% faster analysis turnaround
- Foundry-certified methodologies
- Seamless integration with physical design
Our power integrity team provides more than just analysis - we deliver optimized solutions including power grid reinforcement, decap placement strategies, and package co-design recommendations. We've helped clients achieve 20% better power efficiency while meeting all reliability targets.